Show simple item record

Quantum tunneling in magnetic tunneling junctions

dc.contributores-ES
dc.creatorCruz de Gracia, Evgeni
dc.creatorStrazzabosco Dorneles, Lucio
dc.creatorSchelp, Luiz Fernando
dc.creatorRibeiro Teixiera, Sérgio
dc.creatorBaibich, Mario Norberto
dc.date2012-06-29
dc.date.accessioned2017-07-28T17:47:50Z
dc.date.available2017-07-28T17:47:50Z
dc.identifierhttp://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96
dc.identifier.urihttp://ridda2.utp.ac.pa/handle/123456789/2161
dc.descriptionThis paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth of the effective area-resistance product with the effective barrier thickness, and the concentration of the tunnel current in small areas of the junctions, were identified by fitting room temperature I-V curves, for each individual sample, with either Simmons’ [J. Appl. Phys. 34, 1793 (1963); 35, 2655 (1964); 34, 2581 (1963)] or Chow’s [J. Appl. Phys. 36, 559 (1965)] model. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution and showing quantum tunneling as the charge transport mechanism. This mechanism, is also, verified through I-T curves.es-ES
dc.formatapplication/pdf
dc.formattext/html
dc.languagespa
dc.publisherUniversidad Tecnológica de Panamáes-ES
dc.relationhttp://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96/pdf
dc.relationhttp://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96/html
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/4.0/
dc.source2219-6714
dc.source1680-8894
dc.sourceI+D Tecnológico; Vol. 8, Núm. 1 (2012): Revista I+D Tecnológico; 26-32es-ES
dc.subjectElectronic transport, junction, magnetization, tunnelinges-ES
dc.titleQuantum tunneling in magnetic tunneling junctionses-ES
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion
dc.coveragees-ES
dc.coveragees-ES
dc.coveragees-ES


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

  • Vol. 8, Núm. 1 (2012): Revista I+D Tecnológico [5]
    La Universidad Tecnológica de Panamá presenta a la comunidad científica del país la Revista de I+D Tecnológico volumen No. 8 donde presentamos investigaciones de gran interés y utilidad en las áreas de estructura, materiales, metrología y geociencias.

Show simple item record